The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.

搭建了基于半导体可饱和吸收镜（SESAM）锁模的全保偏皮秒脉冲光纤激光器，对比分析了以多量子阱和体材料作为可饱和吸收层的SESAM对锁模激光器输出特性的影响。实验结果表明，多量子阱和体材料SESAM均可实现稳定的自启动锁模。随着量子阱周期数的增加，SESAM调制深度增大，激光器输出脉冲宽度变窄，具有更高的输出功率和更大的锁模区间。但量子阱周期数过高的SESAM具有较大非饱和损耗，使得相同泵浦功率下输出功率降低。在相同调制深度下，体材料SESAM的非饱和损耗偏大，降低了输出功率和光光转化效率，但对脉冲的窄化作用更显著。SESAM对输出脉冲的波长和光谱宽度无显著影响，主要受光纤布拉格光栅（FBG）控制。本文对SESAM的设计与选型具有一定指导意义。

在GaAs基GaInP/AlGaInP单量子阱结构外延片上分别使用磁控溅射设备生长ZnO薄膜和等离子增强化学气相沉积设备生长SiO₂薄膜，以ZnO介质层作为Zn杂质诱导源，采用固态扩Zn的方式对激光器进行选择性区域诱导以制备非吸收窗口来提高器件的腔面光学灾变损伤阈值，从而提高半导体激光器的输出功率和长期可靠性。在580~680 ℃、20~60 min退火条件下对Zn杂质诱导量子阱混杂展开研究，实验发现，ZnO/SiO₂或ZnO/Si₃N₄复合介质层的采用比单一Zn介质层的杂质诱导蓝移量大，且在680 ℃、30 min的条件下获得了最大55 nm的蓝移量。分析结果表明，介质层所施加的压应变会将外延片表面GaAs层中Ga原子析出，促使Zn原子进入外延层中以诱导量子阱混杂。通过测量光致发光光谱发现发光强度并没有明显下降，可为后期器件制作提供借鉴。

Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO₂ film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication.